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Please use this identifier to cite or link to this item: http://www.lib.ncsu.edu/resolver/1840.16/1668

Title: Schottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design.
Authors: Ozbek, Ayse Merve
Advisors: Dr. Mark Johnson, Committee Member
Dr.Doug Barlage, Committee Chair
Dr. Mehmet C. Ozturk, Committee Member
Keywords: GaN
schottky
MOSFET
HFET
Issue Date: 25-Apr-2008
Degree: MS
Discipline: Electrical Engineering
Abstract: 
URI: http://www.lib.ncsu.edu/resolver/1840.16/1668
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