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Please use this identifier to cite or link to this item: http://www.lib.ncsu.edu/resolver/1840.16/4818

Title: Analysis and Optimization of 1200V Silicon Carbide Bipolar Junction Transistor
Authors: Gao, Yan
Advisors: Mo-Yuen Chow, Committee Member
Mesut E Baran, Committee Member
Alex Q. Huang, Committee Chair
Doug Barlage, Committee Member
Keywords: degradation
current gain
sic
bipolar junction transistor
Issue Date: 2-Oct-2008
Degree: PhD
Discipline: Electrical Engineering
Abstract: 
URI: http://www.lib.ncsu.edu/resolver/1840.16/4818
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