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Please use this identifier to cite or link to this item: http://www.lib.ncsu.edu/resolver/1840.16/5251

Title: Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application
Authors: Lee, Sanghyun
Advisors: GERRY LUCOVSKY, Committee Co-Chair
CALTON OSBURN, Committee Co-Chair
ROBERT M. KOLBAS, Committee Member
DOUG BARLAGE, Committee Member
Keywords: HAFNIUM OXIDE
TITANIUM OXIDE
HAFNIUM SILICON OXYNITRIDE
CMOS
HIGH K
GATE DIELECTRICS
Issue Date: 29-Nov-2007
Degree: PhD
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/5251
Appears in Collections:Dissertations

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