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Title: Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.
Authors: Suri, Rahul
Advisors: Veena Misra, Committee Chair
Mark Johnson, Committee Member
Salah M. Bedair, Committee Member
Mehmet Ozturk, Committee Member
Dan Lichtenwalner, Committee Member
Issue Date: 6-Aug-2010
Degree: Doctor of Philosophy
Discipline: Electrical Engineering
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