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Please use this identifier to cite or link to this item: http://www.lib.ncsu.edu/resolver/1840.16/6639

Title: Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.
Authors: Suri, Rahul
Advisors: Veena Misra, Committee Chair
Mark Johnson, Committee Member
Salah M. Bedair, Committee Member
Mehmet Ozturk, Committee Member
Dan Lichtenwalner, Committee Member
Issue Date: 6-Aug-2010
Degree: Doctor of Philosophy
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/6639
Appears in Collections:Dissertations

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