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Please use this identifier to cite or link to this item: http://www.lib.ncsu.edu/resolver/1840.16/7111

Title: Si1-yCy Epitaxy from Disilane and Trimethylsilane by Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition.
Authors: Kwak, Byung-Il
Advisors: Mehmet Ozturk, Chair
Veena Misra, Member
Michael Escuti, Member
Mark Johnson, Member
Issue Date: 20-Dec-2010
Degree: Doctor of Philosophy
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/7111
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