Investigation of ALD Dielectrics for Improved Threshold Voltage Stability and Current Collapse Suppression in AlGaN/GaN MOS-HFETs.

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Title: Investigation of ALD Dielectrics for Improved Threshold Voltage Stability and Current Collapse Suppression in AlGaN/GaN MOS-HFETs.
Author: Ramanan, Narayanan
Advisors: Veena Misra, Chair
Griff Bilbro, Member
John Muth, Member
Zlatko Sitar, Member
Date: 2014-09-10
Degree: Doctor of Philosophy
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/10035


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