Developing Physics-based Models for 4H-SiC High Voltage Power Switches - MOSFET, IGBT and GTO

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Title: Developing Physics-based Models for 4H-SiC High Voltage Power Switches - MOSFET, IGBT and GTO
Author: Lee, Meng-Chia
Advisors: Alex Huang, Chair
B. Baliga, Member
Woongje Sung, Member
Chih-Hao Chang, Member
Date: 2015-10-23
Degree: Doctor of Philosophy
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/10699


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