Spectroscopic Studies of Semiconductor Materials for Aggressive-scaled Micro- and Opto-electronic Devices: nc-SiO2, GeO2; ng-Si, Ge and ng-Transition metal (TM) oxides.

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Title: Spectroscopic Studies of Semiconductor Materials for Aggressive-scaled Micro- and Opto-electronic Devices: nc-SiO2, GeO2; ng-Si, Ge and ng-Transition metal (TM) oxides.
Author: Cheng, Cheng
Advisors: Gerald Lucovsky, Chair
David Aspnes, Member
Jerry Whitten, Member
Daniel Dougherty, Member
Date: 2016-01-27
Degree: Doctor of Philosophy
Discipline: Physics
URI: http://www.lib.ncsu.edu/resolver/1840.16/11105


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