Characterization of the Boron Doping Process Using Boron Nitride Solid Source Diffusion

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dc.contributor.advisor Dennis Maher, PhD, Chair en_US
dc.contributor.advisor Richard Kuehn, PhD en_US
dc.contributor.advisor Nadia El-Masry, PhD en_US
dc.contributor.author Castro, Susana Patricia en_US
dc.date.accessioned 2010-04-02T18:04:31Z
dc.date.available 2010-04-02T18:04:31Z
dc.date.issued 1999-05-26 en_US
dc.identifier.other etd-19990523-142337 en_US
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.16/1493
dc.description.abstract The purpose of this research has been to develop an optimum process for the borondoping of implants and polysilicon gates of metal-oxide-semiconductor (MOS) devices.An experimental design was constructed to determine the effects of diffusiontemperature, time, and ambient on characteristics of the doping process. A temperaturerange of 800 to 1000 degrees Celsius was studied with a diffusion time between 10 and 60 minutes. Two diffusion ambients were used for doping processes, a pure nitrogenambient and a nitrogen-oxygen gaseous mixture. Device wafers were fabricated, and thetesting of MOS capacitors and van der Pauw test structures was performed to determinethe effect of diffusion conditions on flatband voltage and poly gate doping. Materialscharacterization techniques were used on monitor wafers for each diffusion process todetermine the wafer structure formed for each process and evaluate the effectiveness ofthe deglaze etch. The processes that resulted in the best device characteristics withoutsuffering from significant poly depletion effects and flatband voltage shifts were wafersdoped at 800 degrees Celsius in a pure nitrogen atmosphere for 20 minutes and 45 minutes. The presence of oxygen in the atmosphere caused the depletion of boron fromthe Si wafer surface. The formation of the Si-B phase only occurred on devices processedat 1000 degrees Celsius. The deglaze process used in this experiment did not fully remove this layer, and thus all devices doped at this temperature were seriously degraded. en_US
dc.rights I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to NC State University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. en_US
dc.title Characterization of the Boron Doping Process Using Boron Nitride Solid Source Diffusion en_US
dc.degree.name MS en_US
dc.degree.level Master's Thesis en_US
dc.degree.discipline Materials Science and Engineering en_US


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