Ultra High Vacuum Physical Vapor Deposition of Yttrium Aluminate and Hafnium Aluminate High-k Dielectrics on Silicon

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dc.contributor.advisor Dr. Gregory N. Parsons, Committee Chair en_US
dc.contributor.author Terry, David B. en_US
dc.date.accessioned 2010-04-02T18:18:06Z
dc.date.available 2010-04-02T18:18:06Z
dc.date.issued 2004-06-17 en_US
dc.identifier.other etd-06162004-160514 en_US
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.16/2854
dc.description.abstract Ultra high vacuum physical vapor deposition is used to deposit thin films of varying yttrium:aluminum and hafnium:aluminum concentrations on H-terminated silicon(100) and oxidized ex-situ at several temperatures. X-ray Photoelectron Spectroscopy is used to analyze the surface composition of the films and electrical properties were evaluated using capacitance-voltages measurements with aluminum electrodes. The diffusion of silicon into the dielectric films is decreased with high concentrations (>78%) of aluminum. However, at high concentrations of aluminum a relatively thick interfacial oxide layer is formed. The flatband voltage shifted from –0.18V to –0.78V for the hafnium oxide films and –1.22V to –1.18V for yttrium oxide films. The flatband voltage shifted from –0.55V to –0.61V for 70% Hf:Al mixture and –0.78V to –0.76V for 42%Y:Al mixture. These flatband voltage shifts indicate that hafnium based mixtures are more sensitive to thermal treatments than yttrium based mixtures. Also, capacitance-voltage measurements show the ability to tune the flatband voltage and possibly vary the rate of silicon oxidation (tune equivalent oxide thickness) by aluminum alloying. en_US
dc.rights I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to NC State University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. en_US
dc.subject High-k dielectrics en_US
dc.subject physical vapor deposition en_US
dc.title Ultra High Vacuum Physical Vapor Deposition of Yttrium Aluminate and Hafnium Aluminate High-k Dielectrics on Silicon en_US
dc.degree.name MS en_US
dc.degree.level thesis en_US
dc.degree.discipline Chemical Engineering en_US


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