Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET
Title: | Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET |
Author: | Ma, Lei |
Advisors: | John Muth, Committee Member Leda Lunardi, Committee Member Mark Johnson, Committee Member Doug Barlage, Committee Chair |
Abstract: | |
Date: | 2008-05-18 |
Degree: | PhD |
Discipline: | Electrical Engineering |
URI: | http://www.lib.ncsu.edu/resolver/1840.16/4478 |
Files in this item
Files | Size | Format | View |
---|---|---|---|
etd.pdf | 6.350Mb |
View/ |