Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET

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dc.contributor.advisor John Muth, Committee Member en_US
dc.contributor.advisor Leda Lunardi, Committee Member en_US
dc.contributor.advisor Mark Johnson, Committee Member en_US
dc.contributor.advisor Doug Barlage, Committee Chair en_US Ma, Lei en_US 2010-04-02T18:54:42Z 2010-04-02T18:54:42Z 2008-05-18 en_US
dc.identifier.other etd-05072007-111606 en_US
dc.description.abstract en_US
dc.rights I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dis sertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to NC State University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. en_US
dc.subject Schottky barrier MISFET en_US
dc.subject Sapphire en_US
dc.subject MOCVD en_US
dc.subject Schottky Barrier MOSFET en_US
dc.title Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET en_US PhD en_US dissertation en_US Electrical Engineering en_US

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