Study of Mn Doped GaN for Spintronic Applications

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dc.contributor.advisor Gerd Duscher, Committee Member en_US
dc.contributor.advisor Nadia El-Masry, Committee Chair en_US
dc.contributor.advisor Salah Bedair, Committee Co-Chair en_US
dc.contributor.advisor Mark Johnson, Committee Member en_US Arkun, Fevzi Erdem en_US 2010-04-02T18:56:58Z 2010-04-02T18:56:58Z 2006-11-20 en_US
dc.identifier.other etd-08172006-214234 en_US
dc.description.abstract Spintronics is an emerging field in which the spin of carriers in addition to the charge of carriers can be used to achieve new functionalities in electronic devices. The availability of materials exhibiting ferromagnetism above room temperature is prerequisite for realizing such devices. Materials suitable for spintronic applications are desired to be compatible with conventional growth and fabrication techniques in addition to exhibiting above room temperature ferromagnetic properties. In this research the growth of GaMnN has been achieved on (0001) sapphire substrates by metal organic chemical vapor deposition using TMGa and (EtCp₂)Mn as organometallic precursors. Magnetic characterization of the grown films was performed by a Superconducting Quantum Interference Device (SQUID) at room temperature. Ferromagnetic properties were observed above room temperature for this material. Co-doping of ferromagnetic GaMnN by silicon and magnesium was performed and ferromagnetic properties of GaMnN have been found to depend on the Fermi level in the crystal itself. The mechanism of ferromagnetism in this material was proposed to be carrier mediated. The magnetic properties were also altered by carrier transfer at a heterointerface indicating that the electronic band structure of the crystal affects the magnetic properties of this material. Growth of GaN based blue light emitting diode structures were achieved by MOCVD using conventional organometallic sources. Fabrication of grown structures was performed in a clean room using standard fabrication techniques for III-Nitrides. Two spin-LEDs containing GaMnN injector layers were also grown to determine the polarization state of the emission from these spin-LEDs. en_US
dc.rights I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to NC State University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. en_US
dc.subject GaMnN en_US
dc.subject InGaN en_US
dc.subject GaN en_US
dc.subject LED en_US
dc.subject spintronics en_US
dc.subject materials science en_US
dc.subject Optoelectronics en_US
dc.title Study of Mn Doped GaN for Spintronic Applications en_US PhD en_US dissertation en_US Materials Science and Engineering en_US

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