Analysis and Optimization of 1200V Silicon Carbide Bipolar Junction Transistor

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Title: Analysis and Optimization of 1200V Silicon Carbide Bipolar Junction Transistor
Author: Gao, Yan
Advisors: Mo-Yuen Chow, Committee Member
Mesut E Baran, Committee Member
Alex Q. Huang, Committee Chair
Doug Barlage, Committee Member
Abstract:
Date: 2008-10-02
Degree: PhD
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/4818


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