Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application

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Title: Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application
Author: Lee, Sanghyun
Advisors: GERRY LUCOVSKY, Committee Co-Chair
CALTON OSBURN, Committee Co-Chair
ROBERT M. KOLBAS, Committee Member
DOUG BARLAGE, Committee Member
Date: 2007-11-29
Degree: PhD
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/5251


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