Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.
| Title: | Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors. |
| Author: | Suri, Rahul |
| Advisors: | Veena Misra, Committee Chair Mark Johnson, Committee Member Salah M. Bedair, Committee Member Mehmet Ozturk, Committee Member Dan Lichtenwalner, Committee Member |
| Date: | 2010-08-06 |
| Degree: | Doctor of Philosophy |
| Discipline: | Electrical Engineering |
| URI: | http://www.lib.ncsu.edu/resolver/1840.16/6639 |
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