Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.

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Title: Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.
Author: Suri, Rahul
Advisors: Veena Misra, Committee Chair
Mark Johnson, Committee Member
Salah M. Bedair, Committee Member
Mehmet Ozturk, Committee Member
Dan Lichtenwalner, Committee Member
Date: 2010-08-06
Degree: Doctor of Philosophy
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/6639


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