Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs.
| Title: | Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs. |
| Author: | Kim, Jinwoo |
| Advisors: | Gerald Lucovsky, Co-Chair George Rozgonyi, Co-Chair Jerome Cuomo, Member David Aspnes, Member |
| Date: | 2011-11-04 |
| Degree: | Doctor of Philosophy |
| Discipline: | Materials Science and Engineering |
| URI: | http://www.lib.ncsu.edu/resolver/1840.16/7390 |
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|---|---|---|---|
| etd.pdf | 2.767Mb |
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