Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs.

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Title: Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs.
Author: Kim, Jinwoo
Advisors: Gerald Lucovsky, Co-Chair
George Rozgonyi, Co-Chair
Jerome Cuomo, Member
David Aspnes, Member
Date: 2011-11-04
Degree: Doctor of Philosophy
Discipline: Materials Science and Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/7390


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