Growth of Binary Alloyed Semiconductor Crystals by the Vertical Bridgman-Stockbarger Process with a Strong Magnetic Field.

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Title: Growth of Binary Alloyed Semiconductor Crystals by the Vertical Bridgman-Stockbarger Process with a Strong Magnetic Field.
Author: LaPointe, Stephen James
Advisors: Dr. Richard Johnson, Committee Member
Dr. Nancy Ma, Committee Chair
Dr. Kevin Lyons, Committee Member
Abstract: This thesis presents a model for the unsteady species transport for the growth of alloyed semiconductor crystals during the vertical Bridgman-Stockbarger process with a steady axial magnetic field. During growth of alloyed semiconductors such as germanium-silicon (GeSi) and mercury-cadmium-telluride (HgCdTe), the solute's concentration is not small so that density differences in the melt are very large. These compositional variations drive compositionally-driven buoyant convection, or solutal convection, in addition to thermally-driven buoyant convection. These buoyant convections drive convective transport which produces non-uniformities in the concentration in both the melt and the crystal. This transient model predicts the distribution of species in the entire crystal grown in a steady axial magnetic field. The present study presents results of concentration in the crystal and in the melt at several different stages during crystal growth.
Date: 2004-12-01
Degree: MS
Discipline: Mechanical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/759


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