Growth of Binary Alloyed Semiconductor Crystals by the Vertical Bridgman-Stockbarger Process with a Strong Magnetic Field.
No Thumbnail Available
Files
Date
2004-12-01
Authors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
This thesis presents a model for the unsteady species transport for the growth of alloyed semiconductor crystals during the vertical Bridgman-Stockbarger process with a steady axial magnetic field. During growth of alloyed semiconductors such as germanium-silicon (GeSi) and mercury-cadmium-telluride (HgCdTe), the solute's concentration is not small so that density differences in the melt are very large. These compositional variations drive compositionally-driven buoyant convection, or solutal convection, in addition to thermally-driven buoyant convection. These buoyant convections drive convective transport which produces non-uniformities in the concentration in both the melt and the crystal. This transient model predicts the distribution of species in the entire crystal grown in a steady axial magnetic field. The present study presents results of concentration in the crystal and in the melt at several different stages during crystal growth.
Description
Keywords
crystal growth, bridgman
Citation
Degree
MS
Discipline
Mechanical Engineering
