Impact of Process Variations on 16-nm Dual-floating Gate FET using TCAD Simulations.

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Title: Impact of Process Variations on 16-nm Dual-floating Gate FET using TCAD Simulations.
Author: Kotipalli, Venkata Satya Vinodh
Advisors: Paul Franzon, Chair
Veena Misra, Member
Neil DiSpigna, Member
Date: 2012-12-18
Degree: Master of Science
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/9208


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