Gate Leakage Current in Nitride-Based HFETs.

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Title: Gate Leakage Current in Nitride-Based HFETs.
Author: Goswami, Arunesh
Advisors: Robert Trew, Chair
Griff Bilbro, Member
Brian Floyd, Member
Claude Reynolds Jr, Member
Date: 2014-05-07
Degree: Doctor of Philosophy
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.16/9564


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