Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

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Title: Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches
Date: 2007
Citation: Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2007). Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. U.S. Patent No. 7,195,993. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1056


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