Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches
| Title: | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches |
| Date: | 2007 |
| Citation: | Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2007). Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. U.S. Patent No. 7,195,993. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1056 |
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