Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches
| dc.date.accessioned | 2008-07-24T16:51:11Z | |
| dc.date.available | 2008-07-24T16:51:11Z | |
| dc.date.issued | 2007 | |
| dc.identifier.citation | Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2007). Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. U.S. Patent No. 7,195,993. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1056 | |
| dc.format.extent | 72779 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches | |
| dc.type | Patent |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| US_7195993_B2_I.pdf | 71.07Kb |
View/ |
