Second gallium nitride layers that extend into trenches in first gallium nitride layers

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Title: Second gallium nitride layers that extend into trenches in first gallium nitride layers
Date: 2005
Citation: Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Second gallium nitride layers that extend into trenches in first gallium nitride layers. U.S. Patent No. 6,897,483. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1123


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