Method of forming platinum ohmic contact to p-type silicon carbide

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Title: Method of forming platinum ohmic contact to p-type silicon carbide
Date: 1995
Citation: Glass, R. C., Palmour, J. W., Davis, R. F., & Porter, L. S. (1995). Method of forming platinum ohmic contact to p-type silicon carbide. U.S. Patent No. 5,409,859. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1151


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