Implantation and electrical activation of dopants into monocrystalline silicon carbide
| Title: | Implantation and electrical activation of dopants into monocrystalline silicon carbide |
| Date: | 1992 |
| Citation: | Edmond, J. A., & Davis, R. F. (1992). Implantation and electrical activation of dopants into monocrystalline silicon carbide. U.S. Patent No. 5,087,576. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1153 |
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