Implantation and electrical activation of dopants into monocrystalline silicon carbide

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Title: Implantation and electrical activation of dopants into monocrystalline silicon carbide
Date: 1992
Citation: Edmond, J. A., & Davis, R. F. (1992). Implantation and electrical activation of dopants into monocrystalline silicon carbide. U.S. Patent No. 5,087,576. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1153


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