Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon

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Title: Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon
Date: 1991
Citation: Kong, H. S., Glass, J. T., & Davis, R. F. (1991). Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon. U.S. Patent No. 5,011,549. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1154


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