P-N junction diodes in silicon carbide

Show simple item record

dc.date.accessioned 2008-07-28T15:59:13Z
dc.date.available 2008-07-28T15:59:13Z
dc.date.issued 1990
dc.identifier.citation Edmond, J. A., & Davis, R. F. (1990). P-N junction diodes in silicon carbide. U.S. Patent No. 4,947,218. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/1155
dc.format.extent 105161 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title P-N junction diodes in silicon carbide
dc.type Patent


Files in this item

Files Size Format View
US_4947218_A_I.pdf 102.6Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record