P-N junction diodes in silicon carbide
| dc.date.accessioned | 2008-07-28T15:59:13Z | |
| dc.date.available | 2008-07-28T15:59:13Z | |
| dc.date.issued | 1990 | |
| dc.identifier.citation | Edmond, J. A., & Davis, R. F. (1990). P-N junction diodes in silicon carbide. U.S. Patent No. 4,947,218. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1155 | |
| dc.format.extent | 105161 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | P-N junction diodes in silicon carbide | |
| dc.type | Patent |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| US_4947218_A_I.pdf | 102.6Kb |
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