Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon

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Title: Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
Date: 1990
Citation: Kong, H. S., Glass, J. T., & Davis, R. F. (1990). Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon. U.S. Patent No. 4,912,064. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1156


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