Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

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Title: Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
Date: 1989
Citation: Davis, R. F., Carter, C. H., & Hunter, C. E. (1989). Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide. U.S. Patent No. 4,866,005. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1158


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