Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
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1989
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Davis, R. F., Carter, C. H., & Hunter, C. E. (1989). Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide. U.S. Patent No. 4,866,005. Washington, DC: U.S. Patent and Trademark Office.
