Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

Show simple item record

dc.date.accessioned 2008-07-28T16:01:57Z
dc.date.available 2008-07-28T16:01:57Z
dc.date.issued 1989
dc.identifier.citation Davis, R. F., Carter, C. H., & Hunter, C. E. (1989). Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide. U.S. Patent No. 4,866,005. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/1158
dc.format.extent 102795 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
dc.type Patent


Files in this item

Files Size Format View
US_4866005_A_I.pdf 100.3Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record