Method for forming a p-n junction in silicon carbide

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Title: Method for forming a p-n junction in silicon carbide
Date: 1994
Citation: Baliga, B. J, Alok, D., & Bhatnagar, M. (1994). Method for forming a p-n junction in silicon carbide. U.S. Patent No. 5,318,915. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1197


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