Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

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Title: Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
Date: 1995
Citation: Baliga, B. J., & Alok, D. (1995). Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices. U.S. Patent No. 5,449,925. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1198


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