Method of forming trenches in monocrystalline silicon carbide

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Title: Method of forming trenches in monocrystalline silicon carbide
Date: 1995
Citation: Baliga, B. J., & Alok, D. (1995). Method of forming trenches in monocrystalline silicon carbide. U.S. Patent No. 5,436,174. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1200


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