Latch-up resistant bipolar transistor with trench IGFET and buried collector

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Title: Latch-up resistant bipolar transistor with trench IGFET and buried collector
Date: 1996
Citation: Baliga, B. J., & Korec, J. (1996). Latch-up resistant bipolar transistor with trench IGFET and buried collector. U.S. Patent No. 5,488,236. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1201


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