Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing

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Title: Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing
Date: 1995
Citation: Ozturk, M., & Sanganeria, M. (1995). Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing. U.S. Patent No. 5,439,850. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1216


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