Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures
| Title: | Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures |
| Date: | 1994 |
| Citation: | Ozturk, M., Grider, D., Sanganeria, M., Ashburn, S., & Wortman, J. (1994). Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures. U.S. Patent No. 5,336,903. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1229 |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| US_5336903_A_I.pdf | 91.86Kb |
View/ |