Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures
Title: | Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures |
Date: | 1994 |
Citation: | Ozturk, M., Grider, D., Sanganeria, M., Ashburn, S., & Wortman, J. (1994). Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures. U.S. Patent No. 5,336,903. Washington, DC: U.S. Patent and Trademark Office. |
URI: | http://www.lib.ncsu.edu/resolver/1840.2/1229 |
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