Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures

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Title: Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures
Date: 1994
Citation: Ozturk, M., Grider, D., Sanganeria, M., Ashburn, S., & Wortman, J. (1994). Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures. U.S. Patent No. 5,336,903. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1229


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