Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures
| dc.date.accessioned | 2008-07-28T20:30:09Z | |
| dc.date.available | 2008-07-28T20:30:09Z | |
| dc.date.issued | 1994 | |
| dc.identifier.citation | Ozturk, M., Grider, D., Sanganeria, M., Ashburn, S., & Wortman, J. (1994). Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures. U.S. Patent No. 5,336,903. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1229 | |
| dc.format.extent | 94073 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures | |
| dc.type | Patent |
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| Files | Size | Format | View |
|---|---|---|---|
| US_5336903_A_I.pdf | 91.86Kb |
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