Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures
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1994
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Ozturk, M., Grider, D., Sanganeria, M., Ashburn, S., & Wortman, J. (1994). Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures. U.S. Patent No. 5,336,903. Washington, DC: U.S. Patent and Trademark Office.