Deposition of germanium thin films on silicon dioxide employing interposed polysilicon laye
| dc.date.accessioned | 2008-07-28T20:30:57Z | |
| dc.date.available | 2008-07-28T20:30:57Z | |
| dc.date.issued | 1993 | |
| dc.identifier.citation | Ozturk, M., & Wortman, J. (1993). Deposition of germanium thin films on silicon dioxide employing interposed polysilicon laye. U.S. Patent No. 5,250,452. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1230 | |
| dc.format.extent | 81810 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Deposition of germanium thin films on silicon dioxide employing interposed polysilicon laye | |
| dc.type | Patent |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| US_5250452_A_I.pdf | 79.89Kb |
View/ |
