Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

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Title: Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies
Date: 1991
Citation: Blewer, R. S., Gullinger, T. R., Kelly, M. J., & Tsao, S. S. (1991). Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies. U.S. Patent No. 5,023,200. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1244


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