Diode-assisted gate turn-off thyristor

No Thumbnail Available

Date

2002

Authors

Advisors

Journal Title

Series/Report No.

Journal ISSN

Volume Title

Publisher

Abstract

Description

Keywords

Citation

Li, Y. Huang, A. Q., & Motto, K. (2002). Diode-assisted gate turn-off thyristor. U.S. Patent No. 6,426,666. Washington, DC: U.S. Patent and Trademark Office.

Degree

Discipline

Collections