Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates
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2003
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Niimi, H., Chambers, J. J., Khamankar, R., & Grider, D. T. (2003). Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates. U.S. Patent No. 6,503,846. Washington, DC: U.S. Patent and Trademark Office.
