Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates

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Title: Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates
Date: 2003
Citation: Niimi, H., Chambers, J. J., Khamankar, R., & Grider, D. T. (2003). Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates. U.S. Patent No. 6,503,846. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1320


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