Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures

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Title: Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures
Date: 2004
Citation: Niimi, H., Khamankar, R., Chambers, J. J., Hattangady, S., & Rotondaro, A. L. (2004). Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures. U.S. Patent No. 6,780,719. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1321


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