Use of indium to define work function of p-type doped polysilicon

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Title: Use of indium to define work function of p-type doped polysilicon
Date: 2004
Citation: Rotondaro, A. L., Chambers, J. J., & Jain, A. (2004). Use of indium to define work function of p-type doped polysilicon. U.S. Patent No. 6,803,611. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1322


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