High-k gate dielectric with uniform nitrogen profile and methods for making the same

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Title: High-k gate dielectric with uniform nitrogen profile and methods for making the same
Date: 2004
Citation: Colombo, L., Quevedo-Lopez, M., Chambers, J. J., Visokay, M. R., & Rotondaro, A. L. (2004). High-k gate dielectric with uniform nitrogen profile and methods for making the same. U.S. Patent No. 6,809,370. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1323


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