High-k gate dielectric with uniform nitrogen profile and methods for making the same
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2004
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Colombo, L., Quevedo-Lopez, M., Chambers, J. J., Visokay, M. R., & Rotondaro, A. L. (2004). High-k gate dielectric with uniform nitrogen profile and methods for making the same. U.S. Patent No. 6,809,370. Washington, DC: U.S. Patent and Trademark Office.