High temperature interface layer growth for high-k gate dielectric

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Title:	High temperature interface layer growth for high-k gate dielectric
Date:	2005
Citation:	Colombo, L., Chambers, J. J., Rotondaro, A. L., & Visokay, M. R. (2005). High temperature interface layer growth for high-k gate dielectric. U.S. Patent No. 6,852,645. Washington, DC: U.S. Patent and Trademark Office.
URI:	http://www.lib.ncsu.edu/resolver/1840.2/1324



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