High temperature interface layer growth for high-k gate dielectric
Title: | High temperature interface layer growth for high-k gate dielectric |
Date: | 2005 |
Citation: | Colombo, L., Chambers, J. J., Rotondaro, A. L., & Visokay, M. R. (2005). High temperature interface layer growth for high-k gate dielectric. U.S. Patent No. 6,852,645. Washington, DC: U.S. Patent and Trademark Office. |
URI: | http://www.lib.ncsu.edu/resolver/1840.2/1324 |
Files in this item
Files | Size | Format | View |
---|---|---|---|
US_6852645_B2_I.pdf | 115.8Kb |
View/ |