High temperature interface layer growth for high-k gate dielectric
| dc.date.accessioned | 2008-10-13T21:33:34Z | |
| dc.date.available | 2008-10-13T21:33:34Z | |
| dc.date.issued | 2005 | |
| dc.identifier.citation | Colombo, L., Chambers, J. J., Rotondaro, A. L., & Visokay, M. R. (2005). High temperature interface layer growth for high-k gate dielectric. U.S. Patent No. 6,852,645. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1324 | |
| dc.format.extent | 118613 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | High temperature interface layer growth for high-k gate dielectric | |
| dc.type | Patent |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| US_6852645_B2_I.pdf | 115.8Kb |
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