Method for fabricating split gate transistor device having high-k dielectrics
| Title: | Method for fabricating split gate transistor device having high-k dielectrics |
| Date: | 2005 |
| Citation: | Rotondaro, A. L., Visokay, M. R., Chambers, J. J., & Colombo, L. (2005). Method for fabricating split gate transistor device having high-k dielectrics. U.S. Patent No. 6,979,623. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/1327 |
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| US_6979623_B2_I.pdf | 148.6Kb |
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