Method for fabricating split gate transistor device having high-k dielectrics
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2005
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Rotondaro, A. L., Visokay, M. R., Chambers, J. J., & Colombo, L. (2005). Method for fabricating split gate transistor device having high-k dielectrics. U.S. Patent No. 6,979,623. Washington, DC: U.S. Patent and Trademark Office.
