Method for fabricating split gate transistor device having high-k dielectrics
| dc.date.accessioned | 2008-10-13T21:36:59Z | |
| dc.date.available | 2008-10-13T21:36:59Z | |
| dc.date.issued | 2005 | |
| dc.identifier.citation | Rotondaro, A. L., Visokay, M. R., Chambers, J. J., & Colombo, L. (2005). Method for fabricating split gate transistor device having high-k dielectrics. U.S. Patent No. 6,979,623. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1327 | |
| dc.format.extent | 152229 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Method for fabricating split gate transistor device having high-k dielectrics | |
| dc.type | Patent |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| US_6979623_B2_I.pdf | 148.6Kb |
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