High-K gate dielectric defect gettering using dopants

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Title: High-K gate dielectric defect gettering using dopants
Date: 2006
Citation: Colombo, L., Chambers, J. J., & Rotondaro, A. L. (2006). High-K gate dielectric defect gettering using dopants. U.S. Patent No. 7,015,088. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/1329


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